Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (4) -Trapping Ability of Oxygen by Bonded Region between Epitaxial Layer and Silicon Substrate at Room Temperature-

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Bibliographic Information

Other Title
  • 炭素クラスターイオン注入Siエピウェーハの特徴（4） ー 常温接合界面における酸素の捕獲能力 ―
Published
2016-03-03
DOI
  • 10.11470/jsapmeeting.2016.1.0_3622
Publisher
The Japan Society of Applied Physics

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