{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1410001206004677635.json","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000003415253"}],"foaf:Person":[{"foaf:name":[{"@language":"ja","@value":"長谷川 裕記"},{"@language":"en","@value":"Hasegawa H."}],"foaf:familyName":[{"@language":"ja","@value":"長谷川"},{"@language":"en","@value":"Hasegawa"}],"foaf:givenName":[{"@language":"ja","@value":"裕記"},{"@language":"en","@value":"H."}]}],"career":[{"institution":{"notation":[{"@language":"en","@value":"IIS Univ. Tokyo"},{"@language":"ja","@value":"東大生研"}]}}],"product":[{"@id":"https://cir.nii.ac.jp/crid/1390001206004677632","@type":"Article","productIdentifier":[{"@type":"DOI","@value":"10.11316/jpsgaiyo.60.1.4.0_929_3"},{"@type":"NAID","@value":"110004537593"}],"notation":[{"@language":"ja","@value":"27aYM-11 III-V族化合物半導体の光学スペクトルの塑性変形による変化(領域10, 領域4合同格子欠陥・ナノ(半導体),領域10(誘電体, 格子欠陥, X線・粒子線, フォノン物性))"},{"@language":"en","@value":"27aYM-11 Change in optical spectra of III-V compound semiconductors by plastic deformation"}],"relation":[{"type":"creator"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001206009131008","@type":"Article","productIdentifier":[{"@type":"DOI","@value":"10.11316/jpsgaiyo.62.1.4.0_967_4"},{"@type":"NAID","@value":"110007192180"}],"notation":[{"@language":"ja","@value":"20aXB-8 GaNの光吸収端の塑性変形による変化(格子欠陥・ナノ構造(転位・力学特性),領域10,誘導体,格子欠陥,X線・粒子線,フォノン物性)"},{"@language":"en","@value":"20aXB-8 Change in Optical Absorption Edge of GaN due to elastic deformation"}],"relation":[{"type":"creator"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282680974465152","@type":"Article","productIdentifier":[{"@type":"DOI","@value":"10.11316/jpsgaiyo.59.1.4.0_797_4"},{"@type":"NAID","@value":"110002197861"}],"notation":[{"@language":"ja","@value":"27pYC-3 Sc-Ti-Rh系近似結晶の作製と電気抵抗(準結晶(物性))(領域6)"},{"@language":"en","@value":"27pYC-3 The formation of 1/1-cubic approximant in Sc-Ti-Rh systems and their electrical resistivity"}],"relation":[{"type":"creator"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282680981053824","@type":"Article","productIdentifier":[{"@type":"DOI","@value":"10.11316/jpsgaiyo.60.2.4.0_809_3"},{"@type":"NAID","@value":"110004560004"}],"notation":[{"@language":"ja","@value":"20aYN-1 III-V族化合物半導体の塑性変形による光吸収スペクトルの変化(格子欠陥・ナノ構造(分光法・炭素系物質),領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))"},{"@language":"en","@value":"20aYN-1 Change in optical spectra of III-V compound semiconductors by plastic deformation"}],"relation":[{"type":"creator"}]}],"dataSourceIdentifier":[{"@type":"JALC","@value":"oai:japanlinkcenter.org:2003818867_U72kcv3cNhzpEoYQG0YnlwiKglj"},{"@type":"JALC","@value":"oai:japanlinkcenter.org:2003810300_134KCmYqi0uYyOq5LsoMYJzIa2Q"},{"@type":"JALC","@value":"oai:japanlinkcenter.org:2003822002_134KCmYqi0uYyOq5LsoMYJzIa2Q"},{"@type":"JALC","@value":"oai:japanlinkcenter.org:2003834046_134KCmYqi0uYyOq5LsoMYJzIa2Q"},{"@type":"CIA","@value":"110002197861_134KCmYqi0uYyOq5LsoMYJzIa2Q"},{"@type":"CIA","@value":"110004537593_U72kcv3cNhzpEoYQG0YnlwiKglj"},{"@type":"CIA","@value":"110007192180_134KCmYqi0uYyOq5LsoMYJzIa2Q"},{"@type":"CIA","@value":"110004560004_134KCmYqi0uYyOq5LsoMYJzIa2Q"}]}