{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1410282679040260352.json","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000006426280"}],"foaf:Person":[{"foaf:name":[{"@language":"ja","@value":"名西 [ヤス]之"},{"@language":"en","@value":"NANISHI Yasushi"}]}],"career":[{"institution":{"notation":[{"@language":"ja","@value":"立命館大学理工学部"},{"@language":"en","@value":"Department of Photonics, Ritsumeikan University"}]}}],"product":[{"@id":"https://cir.nii.ac.jp/crid/1390282679032209664","@type":"Article","productIdentifier":[{"@type":"DOI","@value":"10.2320/materia.43.12"},{"@type":"NDL_BIB_ID","@value":"6925281"},{"@type":"NDL_CALL_NUMBER","@value":"Z17-313"},{"@type":"URI","@value":"http://id.ndl.go.jp/bib/6925281"},{"@type":"URI","@value":"https://ndlsearch.ndl.go.jp/books/R000000004-I6925281"},{"@type":"URI","@value":"https://www.jstage.jst.go.jp/article/materia1994/43/1/43_1_12/_pdf"},{"@type":"NAID","@value":"10011981113"},{"@type":"NAID","@value":"80016389172"}],"notation":[{"@value":"電子・情報材料　材料戦略　　次世代情報通信用窒化物半導体電子デバイス開発の現状と材料学的課題"},{"@language":"en","@value":"Recent Development of Nitride Semiconductor Electronic Devices for Next Generation Information and Communication Systems"},{"@language":"ja-Kana","@value":"ジ セダイ ジョウホウ ツウシンヨウ チッカブツ ハンドウタイ デンシ デバイス カイハツ ノ ゲンジョウ ト ザイリョウガクテキ カダイ"}],"relation":[{"type":"creator"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282679040260352","@type":"Article","productIdentifier":[{"@type":"DOI","@value":"10.3131/jvsj.42.530"},{"@type":"NDL_BIB_ID","@value":"4750737"},{"@type":"NDL_CALL_NUMBER","@value":"Z16-474"},{"@type":"URI","@value":"http://id.ndl.go.jp/bib/4750737"},{"@type":"URI","@value":"https://ndlsearch.ndl.go.jp/books/R000000004-I4750737"},{"@type":"NAID","@value":"10002476985"}],"notation":[{"@language":"en","@value":"Observation of Electron-Cyclotron-Resonance Plasma-Excited Molecular Beam Epitaxial Growth of GaN by Optical Emission Spectroscopy."},{"@value":"プラズマ発光分光分析によるＧａＮ電子サイクロトロン共鳴プラズマ励起分子線エピタキシャル成長の観察"},{"@language":"ja-Kana","@value":"プラズマ ハッコウ ブンコウ ブンセキ ニ ヨル GaN デンシ サイクロトロン キョウメイ プラズマレイキブンシセン エピタキシャル セイチョウ ノ カンサツ"}],"relation":[{"type":"creator"}]},{"@id":"https://cir.nii.ac.jp/crid/1520009410236729856","@type":"Article","productIdentifier":[{"@type":"NDL_BIB_ID","@value":"2468418"},{"@type":"NDL_CALL_NUMBER","@value":"Z15-243"},{"@type":"URI","@value":"http://id.ndl.go.jp/bib/2468418"},{"@type":"URI","@value":"https://ndlsearch.ndl.go.jp/books/R000000004-I2468418"},{"@type":"NAID","@value":"40000278592"}],"notation":[{"@value":"米国における結晶研究"},{"@language":"ja-Kana","@value":"ベイコク ニ オケル ケッショウ ケンキュウ"}],"relation":[{"type":"creator"}]}],"dataSourceIdentifier":[{"@type":"JALC","@value":"oai:japanlinkcenter.org:0006096920_Um4AD2So0qRGQMwuO60QjkHLEVY"},{"@type":"JALC","@value":"oai:japanlinkcenter.org:0023541572_Ai14yapsPVzPb28sbgWQ1SkVJLY"},{"@type":"CIA","@value":"10011981113_1ycly8bH6fBTW0JQ362oAiD1jNP"},{"@type":"CIA","@value":"40000278592_6wxXibQnDPbInB3JAHbrugnsgfS"},{"@type":"CIA","@value":"10002476985_TotxUblxFgPuiEIkhKbHDhAkh6v"},{"@type":"NDL_SEARCH","@value":"oai:ndlsearch.ndl.go.jp:R000000004-I2468418_6wxXibQnDPbInB3JAHbrugnsgfS"},{"@type":"CROSSREF","@value":"10.2320/materia.43.12_Un0Nqb2iQYIZRCyIowK8ifml8UL"},{"@type":"CROSSREF","@value":"10.3131/jvsj.42.530_EuURlS4q29qt6QGoh18f6KZshyD"},{"@type":"OPENAIRE","@value":"doi_dedup___::161bfd06d83b898fe96db7eb4d22f78b_Un0Nqb2iQYIZRCyIowK8ifml8UL"}]}