{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1410282679357348993.json","@type":"Researcher","foaf:Person":[{"foaf:name":[{"@language":"en","@value":"Takashsma Kazuya"}],"foaf:familyName":[{"@language":"en","@value":"Takashsma"}],"foaf:givenName":[{"@language":"en","@value":"Kazuya"}]}],"career":[{"institution":{"notation":[{"@language":"en","@value":"Department of Electrical and Electronics Engineering, Kobe University"}]}}],"product":[{"@id":"https://cir.nii.ac.jp/crid/1390282679357348992","@type":"Article","productIdentifier":[{"@type":"DOI","@value":"10.4131/jshpreview.7.715"},{"@type":"NDL_BIB_ID","@value":"4494032"},{"@type":"NDL_CALL_NUMBER","@value":"Z17-1589"},{"@type":"URI","@value":"http://id.ndl.go.jp/bib/4494032"},{"@type":"URI","@value":"https://ndlsearch.ndl.go.jp/books/R000000004-I4494032"},{"@type":"NAID","@value":"10002691565"}],"notation":[{"@language":"en","@value":"High -Pressure Study of Deep Emission Band at GaInP/GaAs Interface."},{"@language":"ja-Kana","@value":"High-Pressure Study of Deep Emission Ba"}],"relation":[{"type":"creator"}]}],"dataSourceIdentifier":[{"@type":"JALC","@value":"oai:japanlinkcenter.org:0011553021_2MI0MyXHEPJysjnisN0D7mzrpEf"},{"@type":"CROSSREF","@value":"10.4131/jshpreview.7.715_ZBZjkaVuXu5DeKHSY7lcAyj0LKI"},{"@type":"OPENAIRE","@value":"doi_dedup___::2a058c10bf491d0328908e3f91295a7a_ZBZjkaVuXu5DeKHSY7lcAyj0LKI"}]}