著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Masashi Kato and Hidenori Ono and Masaya Ichimura,Observation of defects that reduce schottky barrier height in 4H-SiC schottky contacts using electrochemical deposition of ZnO,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2011-03,50,3,036603,https://cir.nii.ac.jp/crid/1520009407028930048,https://doi.org/10.7567/jjap.50.036603