著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Mari Matsumoto and Ryuji Ohba and Shin-ichi Yasuda,Non-stoichiometric Si[x]N metal-oxide-semiconductor field-effect transistor for compact random number generator with 0.3Mbit/s generation rate,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2008-08,47,8,6191-6195,https://cir.nii.ac.jp/crid/1520009407450379776,