著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Rui Chen and Hui-Yun Liu and Han-Dong Sun,Carrier relaxation in InAs/InGaAs dots-in-a-well structures,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2010-02,49,2,020203,https://cir.nii.ac.jp/crid/1520009407924039680,https://doi.org/10.1143/jjap.49.020203