著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Weiguo Hu and Bei Ma and Dabing Li,Effects of the AlN interlayer on the distribution and mobility of two-dimensional electron gas in AlGaN/AlN/GaN heterojunctions,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2010-03,49,3,035701,https://cir.nii.ac.jp/crid/1520009407992961792,https://doi.org/10.1143/jjap.49.035701