著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Gen Tsutsui and Toshiro Hiramoto,Experimental study on mobility in (110)-oriented ultrathin-body silicon-on-insulator n-type metal oxide semiconductor field-effect transistor with single and double-gate operations,"Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP",00214922,Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics,2007-09,46,9A,5686-5690,https://cir.nii.ac.jp/crid/1520009408036733824,https://doi.org/10.1143/jjap.46.5686