{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1520009408416674560.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"NDL_BIB_ID","@value":"7699357"}},{"identifier":{"@type":"URI","@value":"http://id.ndl.go.jp/bib/7699357"}},{"identifier":{"@type":"URI","@value":"https://ndlsearch.ndl.go.jp/books/R000000004-I7699357"}},{"identifier":{"@type":"NDL_BIB_ID","@value":"7699033"}},{"identifier":{"@type":"URI","@value":"http://id.ndl.go.jp/bib/7699033"}},{"identifier":{"@type":"URI","@value":"https://ndlsearch.ndl.go.jp/books/R000000004-I7699033"}},{"identifier":{"@type":"NDL_BIB_ID","@value":"7697897"}},{"identifier":{"@type":"URI","@value":"http://id.ndl.go.jp/bib/7697897"}},{"identifier":{"@type":"URI","@value":"https://ndlsearch.ndl.go.jp/books/R000000004-I7697897"}},{"identifier":{"@type":"NAID","@value":"110003499851"}},{"identifier":{"@type":"NAID","@value":"110003501694"}},{"identifier":{"@type":"NAID","@value":"110003501723"}}],"dc:title":[{"@value":"リセスゲートを用いたノーマリーオフAlGaN/GaN HEMT"},{"@language":"ja-Kana","@value":"リセスゲート オ モチイタ ノーマリーオフ AlGaN GaN HEMT"}],"dcterms:alternative":[{"@value":"リセスゲートを用いたノーマリーオフAlGaN/GaN HEMT"},{"@value":"窒化物半導体光・電子デバイス・材料,及び関連技術,及び一般(窒化物半導体国際ワークショップ) ; 特別セッションテーマ:GaN電子デバイスはどこまで特性を伸ばすのか?"},{"@language":"ja-Kana","@value":"チッカブツ ハンドウタイ ヒカリ デンシ デバイス ザイリョウ オヨビ カンレン ギジュツ オヨビ イッパン チッカブツ ハンドウタイ コクサイ ワークショップ ; トクベツ セッションテーマ GaN デンシ デバイス ワ ドコ マデ トクセイ オ ノバス ノ カ"}],"dc:language":"ja","creator":[{"@id":"https://cir.nii.ac.jp/crid/1580572702077741059","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000005110269"}],"foaf:name":[{"@value":"中田 健"}]},{"@id":"https://cir.nii.ac.jp/crid/1580572702435645058","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000004746591"}],"foaf:name":[{"@value":"川崎 健"}]},{"@id":"https://cir.nii.ac.jp/crid/1580572702077741062","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000017703050"}],"foaf:name":[{"@value":"八重樫 誠司"}]}],"publication":{"publicationIdentifier":[{"@type":"NDL_BIB_ID","@value":"000000050569"},{"@type":"ISSN","@value":"09135685"},{"@type":"LISSN","@value":"09135685"},{"@type":"NCID","@value":"AA1123312X"}],"prism:publicationName":[{"@value":"電子情報通信学会技術研究報告 = IEICE technical report : 信学技報"}],"dc:publisher":[{"@value":"東京 : 電子情報通信学会"}],"prism:publicationDate":"2005-10-13","prism:volume":"105","prism:number":"329","prism:startingPage":"51","prism:endingPage":"56"},"url":[{"@id":"http://id.ndl.go.jp/bib/7699357"},{"@id":"https://ndlsearch.ndl.go.jp/books/R000000004-I7699357"},{"@id":"http://id.ndl.go.jp/bib/7699033"},{"@id":"https://ndlsearch.ndl.go.jp/books/R000000004-I7699033"},{"@id":"http://id.ndl.go.jp/bib/7697897"},{"@id":"https://ndlsearch.ndl.go.jp/books/R000000004-I7697897"}],"foaf:topic":[{"@id":"https://cir.nii.ac.jp/all?q=AlGaN","dc:title":"AlGaN"},{"@id":"https://cir.nii.ac.jp/all?q=GaN","dc:title":"GaN"},{"@id":"https://cir.nii.ac.jp/all?q=HMET","dc:title":"HMET"},{"@id":"https://cir.nii.ac.jp/all?q=%E3%83%91%E3%83%AF%E3%83%BC%E3%83%87%E3%83%90%E3%82%A4%E3%82%B9","dc:title":"パワーデバイス"},{"@id":"https://cir.nii.ac.jp/all?q=%E4%BD%8E%E3%82%AA%E3%83%B3%E6%8A%B5%E6%8A%97","dc:title":"低オン抵抗"},{"@id":"https://cir.nii.ac.jp/all?q=%E9%AB%98%E8%80%90%E5%9C%A7","dc:title":"高耐圧"},{"@id":"https://cir.nii.ac.jp/all?q=%E3%83%8E%E3%83%BC%E3%83%9E%E3%83%AA%E3%83%BC%E3%82%AA%E3%83%95","dc:title":"ノーマリーオフ"},{"@id":"https://cir.nii.ac.jp/all?q=power%20switching%20device","dc:title":"power switching device"},{"@id":"https://cir.nii.ac.jp/all?q=low%20specific%20on-state%20resistance","dc:title":"low specific on-state resistance"},{"@id":"https://cir.nii.ac.jp/all?q=high%20breakdown%20voltage","dc:title":"high breakdown voltage"},{"@id":"https://cir.nii.ac.jp/all?q=normally-off","dc:title":"normally-off"}],"relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1050587981432490752","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["cites"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model"}]},{"@id":"https://cir.nii.ac.jp/crid/1360861712213077248","@type":"Article","relationType":["cites"],"jpcoar:relatedTitle":[{"@value":"179 W recessed-gate AlGaN/GaN heterojunction FET with field-modulating plate"}]},{"@id":"https://cir.nii.ac.jp/crid/1362544419665972352","@type":"Article","relationType":["cites"],"jpcoar:relatedTitle":[{"@value":"A high-power AlGaN/GaN heterojunction field-effect transistor"}]},{"@id":"https://cir.nii.ac.jp/crid/1364233270322504320","@type":"Article","relationType":["cites"],"jpcoar:relatedTitle":[{"@value":"Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures"}]},{"@id":"https://cir.nii.ac.jp/crid/1520009408547152896","@type":"Article","relationType":["isCitedBy"],"jpcoar:relatedTitle":[{"@value":"熱CVD成長SiN膜を用いたゲートリセス構造MIS-AlGaN/GaN-HEMTの電気特性"},{"@language":"ja-Kana","@value":"ネツ CVD セイチョウ SiN マク オ モチイタ ゲートリセス コウゾウ MIS AlGaN GaN HEMT ノ デンキ トクセイ"}]},{"@id":"https://cir.nii.ac.jp/crid/1570009750354039680","@type":"Article","relationType":["cites"],"jpcoar:relatedTitle":[{"@language":"en","@value":"350V/150A power HFET on Silicon substrate with source-via grounding (SVG) structure"}]},{"@id":"https://cir.nii.ac.jp/crid/1570291225330622720","@type":"Article","relationType":["cites"],"jpcoar:relatedTitle":[{"@language":"en","@value":"350V/150A power HFET on Silicon substrate with source-via grounding (SVG) structure"}]},{"@id":"https://cir.nii.ac.jp/crid/1571135650260753536","@type":"Article","relationType":["cites"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Normally-off operation power AlGaN/GaN HFET"}]},{"@id":"https://cir.nii.ac.jp/crid/1571698600213851264","@type":"Article","relationType":["cites"],"jpcoar:relatedTitle":[{"@language":"en","@value":"A 174 W High-Efficiency GaN HEMT Power Amplifier for W-CDMA Base Station Applications"}]},{"@id":"https://cir.nii.ac.jp/crid/1571980075734928000","@type":"Article","relationType":["cites"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Measured microwave power performance of AlGaN/GaN MODFET"}]},{"@id":"https://cir.nii.ac.jp/crid/1571980075902414336","@type":"Article","relationType":["isCitedBy"],"jpcoar:relatedTitle":[{"@language":"ja","@value":"熱CVD成長SiN膜を用いたゲートリセス構造MIS-AlGaN/GaN-HEMT"},{"@language":"en","@value":"Recessed gate structure MIS-AlGaN/GaN-HEMT with SiN gate insulator deposited by Thermal CVD"}]},{"@id":"https://cir.nii.ac.jp/crid/1571980076641916416","@type":"Article","relationType":["cites"]},{"@id":"https://cir.nii.ac.jp/crid/1572261550167270912","@type":"Article","relationType":["cites"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Non-Recessed-Gate Enhancement-Mode AlGaN/GaN HEMTs with High RF Performance"}]},{"@id":"https://cir.nii.ac.jp/crid/1572261550167273216","@type":"Article","relationType":["cites"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Normally-off operation power AlGaN/GaN HFET"}]},{"@id":"https://cir.nii.ac.jp/crid/1572824501599983744","@type":"Article","relationType":["cites"],"jpcoar:relatedTitle":[{"@language":"en","@value":"600V AlGaN-GaN power-HEMT : Design, fabrication and demonstration on high-voltage dc-dc converter"}]},{"@id":"https://cir.nii.ac.jp/crid/1573387450074438144","@type":"Article","relationType":["cites"],"jpcoar:relatedTitle":[{"@language":"en","@value":"A 174 W High-Efficiency GaN HEMT Power Amplifier for W-CDMA Base Station Applications"}]},{"@id":"https://cir.nii.ac.jp/crid/1573387450074566272","@type":"Article","relationType":["cites"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Non-Recessed-Gate Enhancement-Mode AlGaN/GaN HEMTs with High RF Performance"}]},{"@id":"https://cir.nii.ac.jp/crid/1573387450074567808","@type":"Article","relationType":["cites"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Normally-off operation power AlGaN/GaN HFET"}]},{"@id":"https://cir.nii.ac.jp/crid/1573668925051151616","@type":"Article","relationType":["cites"],"jpcoar:relatedTitle":[{"@language":"en","@value":"600 V AlGaN/GaN Power-HEMT : Design, Fabrication and Demonstration on High Voltage DC-DC Converter"}]},{"@id":"https://cir.nii.ac.jp/crid/1573950400027862144","@type":"Article","relationType":["cites"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Non-Recessed-Gate Enhancement-Mode AlGaN/GaN HEMTs with High RF Performance"}]},{"@id":"https://cir.nii.ac.jp/crid/1573950400027990528","@type":"Article","relationType":["cites"],"jpcoar:relatedTitle":[{"@language":"en","@value":"A 174 W High-Efficiency GaN HEMT Power Amplifier for W-CDMA Base Station Applications"}]},{"@id":"https://cir.nii.ac.jp/crid/1574231875004245760","@type":"Article","relationType":["cites"],"jpcoar:relatedTitle":[{"@language":"en","@value":"350V/150A power HFET on Silicon substrate with source-via grounding (SVG) structure"}]}],"dataSourceIdentifier":[{"@type":"NDL_SEARCH","@value":"oai:ndlsearch.ndl.go.jp:R000000004-I7699357"},{"@type":"NDL_SEARCH","@value":"oai:ndlsearch.ndl.go.jp:R000000004-I7699033"},{"@type":"NDL_SEARCH","@value":"oai:ndlsearch.ndl.go.jp:R000000004-I7697897"},{"@type":"CIA","@value":"110003499851"},{"@type":"CIA","@value":"110003501723"},{"@type":"CIA","@value":"110003501694"}]}