著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Shu Yang and Sen Huang and Michael Schnee,Enhancement-Mode LaLuO₃-AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2013-08,52,8,,https://cir.nii.ac.jp/crid/1520009408472997248,