著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Gerald Lucovsky,"Multiplet theory for conduction band edge and O-vacancy defect states in SiO2, Si3N4, and Si oxynitride alloy thin films",Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2011-04,50,4,,https://cir.nii.ac.jp/crid/1520009408842222464,