著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Akinobu Teramoto and Rihito Kuroda and Xiang Li,On the Interface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2012-02,51,2,,https://cir.nii.ac.jp/crid/1520009408975380992,