Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
Tatsunori Murata and Yoshihiro Miyagawa and Masazumi Matsuura,Effect of N2 gas flow ratio in plasma-enhanced chemical vapor deposition with SiH4-NH3-N2-He gas mixture on stress relaxation of silicon nitride,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2010-08,49,8,,https://cir.nii.ac.jp/crid/1520009409050896384,