Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
Yoshihiro Ueoka and Kenta Shingu and Hiroshi Yano,Origin of Anisotropic Electrical Properties of 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistors on Off-Axis Substrates,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2012-11,51,11,,https://cir.nii.ac.jp/crid/1520009409166630784,