著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Jong-Hoon Shin and Jinhong Park and SeungYup Jang,Gate Metal Dependent Reverse Leakage Mechanisms in AIGaN/GaN Schottky Diode,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2013-07,52,7,,https://cir.nii.ac.jp/crid/1520009409321393792,