著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Hirokazu Furukawa and Seiichiro Higashi and Tatsuya Okada,Millisecond rapid thermal annealing of Si-wafer induced by high-power-density thermal plasma jet irradiation and its application to ultrashallow junction formation,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2009-04,48,4,04C011,https://cir.nii.ac.jp/crid/1520009409360626176,https://doi.org/10.1143/jjap.48.04c011