{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1520009409360626176.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"NDL_BIB_ID","@value":"10210432"}},{"identifier":{"@type":"URI","@value":"http://id.ndl.go.jp/bib/10210432"}},{"identifier":{"@type":"URI","@value":"https://ndlsearch.ndl.go.jp/books/R000000004-I10210432"}},{"identifier":{"@type":"DOI","@value":"10.1143/jjap.48.04c011"}},{"identifier":{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1143/JJAP.48.04C011"}},{"identifier":{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1143/JJAP.48.04C011/pdf"}},{"identifier":{"@type":"NAID","@value":"40016559644"}}],"dc:title":[{"@value":"Millisecond rapid thermal annealing of Si-wafer induced by high-power-density thermal plasma jet irradiation and its application to ultrashallow junction formation"},{"@language":"ja-Kana","@value":"Millisecond rapid thermal annealing of Si wafer induced by high power density thermal plasma jet irradiation and its application to ultrashallow junction formation"}],"dcterms:alternative":[{"@value":"Millisecond rapid thermal annealing of Si-wafer induced by high-power-density thermal plasma jet irradiation and its application to ultrashallow junction formation"},{"@value":"Special issue: Solid state devices and materials"},{"@language":"ja-Kana","@value":"Special issue Solid state devices and materials"}],"dc:language":"en","creator":[{"@id":"https://cir.nii.ac.jp/crid/1580572699823730432","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000025030811"}],"foaf:name":[{"@value":"Hirokazu Furukawa"}]},{"@id":"https://cir.nii.ac.jp/crid/1420564276183908352","@type":"Researcher","personIdentifier":[{"@type":"KAKEN_RESEARCHERS","@value":"30363047"},{"@type":"NRID","@value":"1000030363047"},{"@type":"NRID","@value":"9000248682289"},{"@type":"NRID","@value":"9000083542673"},{"@type":"NRID","@value":"9000003315160"},{"@type":"NRID","@value":"9000003204375"},{"@type":"NRID","@value":"9000001620460"},{"@type":"NRID","@value":"9000283714860"},{"@type":"NRID","@value":"9000254568639"},{"@type":"NRID","@value":"9000401786267"},{"@type":"NRID","@value":"9000401743016"},{"@type":"NRID","@value":"9000107346269"},{"@type":"NRID","@value":"9000025122919"},{"@type":"NRID","@value":"9000263066178"},{"@type":"NRID","@value":"9000282391990"},{"@type":"NRID","@value":"9000402040927"},{"@type":"NRID","@value":"9000402019393"},{"@type":"NRID","@value":"9000401800144"},{"@type":"NRID","@value":"9000401999063"},{"@type":"NRID","@value":"9000401790831"},{"@type":"NRID","@value":"9000025038058"},{"@type":"NRID","@value":"9000025030812"},{"@type":"NRID","@value":"9000392738484"},{"@type":"NRID","@value":"9000402021152"},{"@type":"NRID","@value":"9000380483657"},{"@type":"NRID","@value":"9000005597845"},{"@type":"NRID","@value":"9000402021339"},{"@type":"NRID","@value":"9000401798194"},{"@type":"NRID","@value":"9000107334580"},{"@type":"NRID","@value":"9000025037722"},{"@type":"NRID","@value":"9000107375225"},{"@type":"NRID","@value":"9000252986209"},{"@type":"NRID","@value":"9000401633556"},{"@type":"NRID","@value":"9000401795649"},{"@type":"NRID","@value":"9000401803922"},{"@type":"NRID","@value":"9000401875012"},{"@type":"NRID","@value":"9000401731194"},{"@type":"NRID","@value":"9000258152563"},{"@type":"NRID","@value":"9000258151367"},{"@type":"NRID","@value":"9000258170611"},{"@type":"NRID","@value":"9000025069571"},{"@type":"NRID","@value":"9000401699967"},{"@type":"NRID","@value":"9000323835139"},{"@type":"NRID","@value":"9000025016410"},{"@type":"NRID","@value":"9000388532783"},{"@type":"NRID","@value":"9000402002508"},{"@type":"NRID","@value":"9000401702218"},{"@type":"NRID","@value":"9000024939499"},{"@type":"NRID","@value":"9000107363367"},{"@type":"NRID","@value":"9000021652292"},{"@type":"NRID","@value":"9000347133545"},{"@type":"NRID","@value":"9000401768450"},{"@type":"NRID","@value":"9000401707338"},{"@type":"NRID","@value":"9000258169007"},{"@type":"NRID","@value":"9000025020075"},{"@type":"NRID","@value":"9000025059559"},{"@type":"NRID","@value":"9000402021172"},{"@type":"NRID","@value":"9000401687052"},{"@type":"NRID","@value":"9000257901617"},{"@type":"NRID","@value":"9000047306551"},{"@type":"NRID","@value":"9000402049436"},{"@type":"NRID","@value":"9000402030261"},{"@type":"NRID","@value":"9000401801644"},{"@type":"NRID","@value":"9000401795621"},{"@type":"NRID","@value":"9000401996524"},{"@type":"NRID","@value":"9000401864299"},{"@type":"NRID","@value":"9000018552228"},{"@type":"NRID","@value":"9000107346408"},{"@type":"NRID","@value":"9000263066155"},{"@type":"NRID","@value":"9000005902417"},{"@type":"NRID","@value":"9000402014838"},{"@type":"NRID","@value":"9000402019975"},{"@type":"NRID","@value":"9000401806574"},{"@type":"NRID","@value":"9000401996496"},{"@type":"NRID","@value":"9000258712852"},{"@type":"NRID","@value":"9000258170619"},{"@type":"NRID","@value":"9000107334724"},{"@type":"NRID","@value":"9000402028389"},{"@type":"NRID","@value":"9000401690087"},{"@type":"NRID","@value":"9000401699361"},{"@type":"NRID","@value":"9000401795268"},{"@type":"NRID","@value":"9000405100538"},{"@type":"NRID","@value":"9000004932858"},{"@type":"NRID","@value":"9000107375592"},{"@type":"NRID","@value":"9000402019136"},{"@type":"NRID","@value":"9000401785779"},{"@type":"NRID","@value":"9000257784192"},{"@type":"NRID","@value":"9000025120608"},{"@type":"NRID","@value":"9000015455629"},{"@type":"NRID","@value":"9000402027348"},{"@type":"NRID","@value":"9000401679493"},{"@type":"NRID","@value":"9000402001011"},{"@type":"NRID","@value":"9000401731113"},{"@type":"NRID","@value":"9000402043285"},{"@type":"NRID","@value":"9000402014795"},{"@type":"NRID","@value":"9000402026366"},{"@type":"NRID","@value":"9000401568201"},{"@type":"NRID","@value":"9000401801730"},{"@type":"NRID","@value":"9000401769385"},{"@type":"NRID","@value":"9000405765170"},{"@type":"NRID","@value":"9000401723463"},{"@type":"NRID","@value":"9000258146720"},{"@type":"NRID","@value":"9000258156855"},{"@type":"NRID","@value":"9000025123133"},{"@type":"NRID","@value":"9000402031170"},{"@type":"NRID","@value":"9000402004784"},{"@type":"NRID","@value":"9000401687837"},{"@type":"NRID","@value":"9000402002594"},{"@type":"NRID","@value":"9000401996143"},{"@type":"NRID","@value":"9000258155183"},{"@type":"NRID","@value":"9000258155363"},{"@type":"NRID","@value":"9000323834054"},{"@type":"RESEARCHMAP","@value":"https://researchmap.jp/read0105194"}],"foaf:name":[{"@value":"Seiichiro Higashi"}]},{"@id":"https://cir.nii.ac.jp/crid/1410013972157996674","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401804503"},{"@type":"NRID","@value":"9000401995355"},{"@type":"NRID","@value":"9000291613477"},{"@type":"NRID","@value":"9000075530205"},{"@type":"NRID","@value":"9000025122918"},{"@type":"NRID","@value":"9000401800141"},{"@type":"NRID","@value":"9000025030813"},{"@type":"NRID","@value":"9000402005365"},{"@type":"NRID","@value":"9000402026732"},{"@type":"NRID","@value":"9000291612735"},{"@type":"NRID","@value":"9000258118491"},{"@type":"NRID","@value":"9000401768451"},{"@type":"NRID","@value":"9000046845445"},{"@type":"NRID","@value":"9000002176033"},{"@type":"NRID","@value":"9000322101755"},{"@type":"NRID","@value":"9000402038325"},{"@type":"NRID","@value":"9000411001401"},{"@type":"NRID","@value":"9000401785782"},{"@type":"NRID","@value":"9000402020987"},{"@type":"NRID","@value":"9000402001008"},{"@type":"NRID","@value":"9000078444179"},{"@type":"NRID","@value":"9000025123135"},{"@type":"RESEARCHMAP","@value":"https://researchmap.jp/read0151858"}],"foaf:name":[{"@value":"Tatsuya Okada"}]}],"publication":{"publicationIdentifier":[{"@type":"NDL_BIB_ID","@value":"000009262265"},{"@type":"ISSN","@value":"00214922"},{"@type":"LISSN","@value":"00214922"},{"@type":"PISSN","@value":"00214922"},{"@type":"EISSN","@value":"13474065"},{"@type":"NCID","@value":"AA12295836"}],"prism:publicationName":[{"@value":"Japanese journal of applied physics : JJAP"}],"dc:publisher":[{"@value":"Tokyo : The Japan Society of Applied Physics"}],"prism:publicationDate":"2009-04","prism:volume":"48","prism:number":"4","prism:startingPage":"04C011"},"reviewed":"false","url":[{"@id":"http://id.ndl.go.jp/bib/10210432"},{"@id":"https://ndlsearch.ndl.go.jp/books/R000000004-I10210432"},{"@id":"https://iopscience.iop.org/article/10.1143/JJAP.48.04C011"},{"@id":"https://iopscience.iop.org/article/10.1143/JJAP.48.04C011/pdf"}],"relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360003446853805184","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"In-situ Measurement of Temperature Variation in Si Wafer during Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003446855302144","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Activation of B and As in Ultrashallow Junction During Millisecond Annealing Induced by Thermal Plasma Jet Irradiation"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449890666368","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Fundamentals of planar-type inductively coupled thermal plasmas on a substrate for large-area material processing"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924863640576","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Elongated Inductively Coupled Thermal Plasma Torch Operable at Atmospheric Pressure"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566396788140800","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566396809492736","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Application of Thermal Plasma Jet Irradiation to Crystallization and Gate Insulator Improvement for High-Performance Thin-Film Transistor Fabrication"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874818964224","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Annealing performance improvement of elongated inductively coupled plasma torch and its application to recovery of plasma-induced Si substrate damage"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001205293849472","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"ja","@value":"熱プラズマジェットを用いた熱処理技術の開発と電子デバイスプロセスへの応用"},{"@language":"en","@value":"Development of Thermal Plasma Jet Induced Annealing Technology and Its Application to Electronic Device Fabrication"},{"@language":"ja-Kana","@value":"ネツ プラズマジェット オ モチイタ ネツ ショリ ギジュツ ノ カイハツ ト デンシ デバイスプロセス エ ノ オウヨウ"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001206256312576","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@language":"en","@value":"10-15 nm Ultrashallow Junction Formation by Flash-Lamp Annealing."}]},{"@id":"https://cir.nii.ac.jp/crid/1520572358387795456","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Ultra-Shallow Junction Formation by Non-Melt Laser Spike Annealing and its Application to Complementary Metal Oxide Semiconductor Devices in 65-nm Node"},{"@language":"ja-Kana","@value":"Ultra Shallow Junction Formation by Non Melt Laser Spike Annealing and its Application to Complementary Metal Oxide Semiconductor Devices in 65 nm Node"}]}],"dataSourceIdentifier":[{"@type":"NDL_SEARCH","@value":"oai:ndlsearch.ndl.go.jp:R000000004-I10210432"},{"@type":"CROSSREF","@value":"10.1143/jjap.48.04c011"},{"@type":"CIA","@value":"40016559644"},{"@type":"CROSSREF","@value":"10.1143/jjap.50.03cb10_references_DOI_C6klNR9jAI25WGm7V5HUwHcsvn8"},{"@type":"CROSSREF","@value":"10.3131/jvsj2.60.77_references_DOI_C6klNR9jAI25WGm7V5HUwHcsvn8"},{"@type":"CROSSREF","@value":"10.7567/jjap.55.07lb03_references_DOI_C6klNR9jAI25WGm7V5HUwHcsvn8"},{"@type":"CROSSREF","@value":"10.7567/jjap.53.03dg01_references_DOI_C6klNR9jAI25WGm7V5HUwHcsvn8"},{"@type":"CROSSREF","@value":"10.7567/jjap.52.05ee01_references_DOI_C6klNR9jAI25WGm7V5HUwHcsvn8"},{"@type":"CROSSREF","@value":"10.7567/jjap.50.03cb10_references_DOI_C6klNR9jAI25WGm7V5HUwHcsvn8"},{"@type":"CROSSREF","@value":"10.1143/jjap.49.04da02_references_DOI_C6klNR9jAI25WGm7V5HUwHcsvn8"},{"@type":"CROSSREF","@value":"10.1143/apex.3.061401_references_DOI_C6klNR9jAI25WGm7V5HUwHcsvn8"}]}