著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Takayuki Hisaka and Yoichi Nogami and Hajime Sasaki,Degradation mechanism of AlGaAs/InGaAs power pseudomorphic high-electron-mobility transistors under large-signal operation,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2008-02,47,2,833-838,https://cir.nii.ac.jp/crid/1520009409406418304,https://doi.org/10.1143/jjap.47.833