{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1520009409406418304.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"NDL_BIB_ID","@value":"9393025"}},{"identifier":{"@type":"URI","@value":"http://id.ndl.go.jp/bib/9393025"}},{"identifier":{"@type":"URI","@value":"https://ndlsearch.ndl.go.jp/books/R000000004-I9393025"}},{"identifier":{"@type":"DOI","@value":"10.1143/jjap.47.833"}},{"identifier":{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1143/JJAP.47.833"}},{"identifier":{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1143/JJAP.47.833/pdf"}},{"identifier":{"@type":"NAID","@value":"40015885143"}}],"dc:title":[{"@value":"Degradation mechanism of AlGaAs/InGaAs power pseudomorphic high-electron-mobility transistors under large-signal operation"},{"@language":"ja-Kana","@value":"Degradation mechanism of AlGaAs InGaAs power pseudomorphic high electron mobility transistors under large signal operation"}],"dcterms:alternative":[{"@value":"Degradation mechanism of AlGaAs/InGaAs power pseudomorphic high-electron-mobility transistors under large-signal operation"}],"dc:language":"en","description":[{"notation":[{"@value":"資料形態 : テキストデータ プレーンテキスト"},{"@value":"コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1580854174901250944","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000025082658"}],"foaf:name":[{"@value":"Takayuki Hisaka"}]},{"@id":"https://cir.nii.ac.jp/crid/1580854174901251074","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000025082659"}],"foaf:name":[{"@value":"Yoichi Nogami"}]},{"@id":"https://cir.nii.ac.jp/crid/1580854174901251075","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000025082660"}],"foaf:name":[{"@value":"Hajime Sasaki"}]}],"publication":{"publicationIdentifier":[{"@type":"NDL_BIB_ID","@value":"000009262265"},{"@type":"ISSN","@value":"00214922"},{"@type":"LISSN","@value":"00214922"},{"@type":"PISSN","@value":"00214922"},{"@type":"EISSN","@value":"13474065"},{"@type":"NCID","@value":"AA12295836"}],"prism:publicationName":[{"@value":"Japanese journal of applied physics : JJAP"}],"dc:publisher":[{"@value":"Tokyo : The Japan Society of Applied Physics"}],"prism:publicationDate":"2008-02","prism:volume":"47","prism:number":"2","prism:startingPage":"833","prism:endingPage":"838"},"reviewed":"false","url":[{"@id":"http://id.ndl.go.jp/bib/9393025"},{"@id":"https://ndlsearch.ndl.go.jp/books/R000000004-I9393025"},{"@id":"https://iopscience.iop.org/article/10.1143/JJAP.47.833"},{"@id":"https://iopscience.iop.org/article/10.1143/JJAP.47.833/pdf"}],"foaf:topic":[{"@id":"https://cir.nii.ac.jp/all?q=reliability","dc:title":"reliability"},{"@id":"https://cir.nii.ac.jp/all?q=humidity","dc:title":"humidity"},{"@id":"https://cir.nii.ac.jp/all?q=microwave%20power%20FETs","dc:title":"microwave power FETs"},{"@id":"https://cir.nii.ac.jp/all?q=millimeter%20wave%20power%20FETs","dc:title":"millimeter wave power FETs"},{"@id":"https://cir.nii.ac.jp/all?q=corrosion","dc:title":"corrosion"}],"relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1361137043580344448","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Electrode Reaction of GaAs Metal Semiconductor Field‐Effect Transistors in Deionized Water"}]},{"@id":"https://cir.nii.ac.jp/crid/1362544419620297216","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMTs by means of electroluminescence"}]},{"@id":"https://cir.nii.ac.jp/crid/1363951794279250688","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT's"}]}],"dataSourceIdentifier":[{"@type":"NDL_SEARCH","@value":"oai:ndlsearch.ndl.go.jp:R000000004-I9393025"},{"@type":"CROSSREF","@value":"10.1143/jjap.47.833"},{"@type":"CIA","@value":"40015885143"}]}