著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Yu Saitoh and Kazuhide Sumiyoshi and Masaya Okada,Extremely low on-resistance and high breakdown voltage observed in vertical GaN Schottky barrier diodes with high-mobility drift layers on low-dislocation-density GaN substrates,Applied physics express : APEX,18820778,Tokyo : Japan Society of Applied Physics,2010-08,3,8,,https://cir.nii.ac.jp/crid/1520010380601694848,