著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Hitoshi Aoki and Akira Matsuzawa,n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor Modeling in Forward Body Bias Condition for Low Voltage Complementary Metal-Oxide-Semiconductor Circuits Design,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2012-04,51,4,,https://cir.nii.ac.jp/crid/1520290882118573056,