Reduction of accumulation capacitance in direct-contact HfO2/p-type Si metal-oxide-semiconductor capacitors
Bibliographic Information
- Other Title
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- Reduction of accumulation capacitance in direct contact HfO2 p type Si metal oxide semiconductor capacitors
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Description
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌
Journal
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 49 (6), 2010-06
Tokyo : The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1520290882142385920
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- NII Article ID
- 40017175979
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- NII Book ID
- AA12295836
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- ISSN
- 00214922
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- NDL BIB ID
- 10730448
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL Search
- CiNii Articles