著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Hideharu Matsuura and Keisuke Izawa and Nobumasa Minohara,Mechanisms of reduction in hole concentration in Al-implanted p-type 6H-SiC by 1 MeV electron irradiation,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2008-07,47,7,5355-5357,https://cir.nii.ac.jp/crid/1520290882376354048,https://doi.org/10.1143/jjap.47.5355