Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
張 睿 and 黄 博勤 and 林 汝静,Physical Mechanism Determining Ge p- and n-MOSFETs Mobility in High Ns Region and Mobility Improvement by Atomically Flat GeOx/Ge Interfaces,電子情報通信学会技術研究報告 = IEICE technical report : 信学技報,09135685,東京 : 電子情報通信学会,2013-01-30,112,421,9-13,https://cir.nii.ac.jp/crid/1520290882825730432,