著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Takahiko Honda and Kazuma Ikeda and Makoto Inagaki,Effect of low growth rate in chemical beam epitaxy on carrier mobility and lifetime of p-GaAsN films,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2011-08,50,8,08KD06,https://cir.nii.ac.jp/crid/1520290883090954240,https://doi.org/10.1143/jjap.50.08kd06