著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI) Seong-Wan Ryu and Minsoo Yoo and Deuksung Choi,Data retention characteristics for gate oxide schemes in sub-50nm saddle-fin transistor dynamic-random-access-memory technology,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2011-04,50,4,,https://cir.nii.ac.jp/crid/1520290883160421888,