著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Tetsuzo Ueda and Masahiro Ishida and Masaaki Yuri,Separation of thin GaN from sapphire by laser lift-off technique,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2011-04,50,4,041001,https://cir.nii.ac.jp/crid/1520290883368240128,https://doi.org/10.1143/jjap.50.041001