著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Bong-Ryeol Park and Jae-Gil Lee and Ho-Young Cha,Normally-Off AIGaN/GaN-on-Si Power Switching Device with Embedded Schottky Barrier Diode,Applied physics express : APEX,18820778,Tokyo : Japan Society of Applied Physics,2013-03,6,3,,https://cir.nii.ac.jp/crid/1520291854927334016,