Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
Takehide Miyazaki and Toshihiko Kanayama,Ultrathin Layered Semiconductor: Si-Rich Transition Metal Silicide,"Japanese journal of applied physics. Part 2, Letters & express letters",00214922,Tokyo : Japan Society of Applied Physics,2007-01,46,1-3,L28-30,https://cir.nii.ac.jp/crid/1520291855652083840,