著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Ssu-I Fu and Shiou-Ying Cheng and Po-Hsien Lai,On the Emitter Ledge Length Effect for InGaP/GaAs Heterojunction Bipolar Transistors,"Japanese journal of applied physics. Part 2, Letters & express letters",00214922,Tokyo : Japan Society of Applied Physics,2007-01,46,1-3,L74-76,https://cir.nii.ac.jp/crid/1520291855700467328,