Investigation of random dopant fluctuation for multi-gate metal-oxide-semiconductor field-effect transistors using analytical solutions of three-dimensional poisson's equation

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  • Investigation of random dopant fluctuation for multi gate metal oxide semiconductor field effect transistors using analytical solutions of three dimensional poisson s equation
Published
2008-04
Publisher
Tokyo : The Japan Society of Applied Physics

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資料形態 : テキストデータ プレーンテキスト
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

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