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Investigation of random dopant fluctuation for multi-gate metal-oxide-semiconductor field-effect transistors using analytical solutions of three-dimensional poisson's equation
Bibliographic Information
- Other Title
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- Investigation of random dopant fluctuation for multi gate metal oxide semiconductor field effect transistors using analytical solutions of three dimensional poisson s equation
- Published
- 2008-04
- Publisher
- Tokyo : The Japan Society of Applied Physics
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Description
資料形態 : テキストデータ プレーンテキスト
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌
Journal
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 47 (4), 2097-2102, 2008-04
Tokyo : The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1520572357266457600
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- NII Article ID
- 40016003373
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- NII Book ID
- AA12295836
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- ISSN
- 00214922
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- NDL BIB ID
- 9476976
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL Search
- CiNii Articles