Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
Do-Kywn Kim and Dong-Seok Kim and Sung-Jae Chang,Performance of GaN Metal-Oxide-Semiconductor Field-Effect Transistor with Regrown n⁺-Source/Drain on a Selectively Etched GaN,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2013-06,52,6,,https://cir.nii.ac.jp/crid/1520572357388293120,