著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI) Koji Nakayama and Yoshitaka Sugawara and Hidekazu Tsuchida,Drift phenomena of forward and reverse recovery characteristics in {0001} 4H-SiC p-i-n diode,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2011-04,50,4,,https://cir.nii.ac.jp/crid/1520572357515573248,