Comparison of Initial Oxidation between Si(110) and Si(100) Surfaces : From Real-Time Photoemission Spectroscopy
Bibliographic Information
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- Si(110)とSi(100)表面の初期酸化過程の違い--リアルタイム光電子分光測定から
- Si 110 ト Si 100 ヒョウメン ノ ショキ サンカ カテイ ノ チガイ リアルタイム コウデンシ ブンコウ ソクテイ カラ
- Si(110)とSi(100)表面の初期酸化過程の違い--リアルタイム光電子分光測定から
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Abstract
By using real-time photoemission spectroscopy, kinetics of initial oxidation of Si(110)-16×2 surface has been investigated and is compared with that of Si(100) surface. Dry oxidation of Si(110) shows rapid initial oxidation just after introduction of the oxygen, which is associated with an Ols state with a weaker binding energy. As the oxidation proceeds, another Ols state with a stronger binding energy develops. The rapid initial oxidation is related to oxidation at or around the Si(111)-like Si adatoms, which are reportedly present in the 16×2 reconstruction of the Si(110) surface.
Journal
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- 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
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電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 106 (108), 61-63, 2006-06
The Institute of Electronics, Information and Communication Engineers