[Updated on Apr. 18] Integration of CiNii Articles into CiNii Research

Comparison of Initial Oxidation between Si(110) and Si(100) Surfaces : From Real-Time Photoemission Spectroscopy

Bibliographic Information

Other Title
  • Si(110)とSi(100)表面の初期酸化過程の違い--リアルタイム光電子分光測定から
  • Si 110 ト Si 100 ヒョウメン ノ ショキ サンカ カテイ ノ チガイ リアルタイム コウデンシ ブンコウ ソクテイ カラ
  • Si(110)とSi(100)表面の初期酸化過程の違い--リアルタイム光電子分光測定から

Search this article

Abstract

By using real-time photoemission spectroscopy, kinetics of initial oxidation of Si(110)-16×2 surface has been investigated and is compared with that of Si(100) surface. Dry oxidation of Si(110) shows rapid initial oxidation just after introduction of the oxygen, which is associated with an Ols state with a weaker binding energy. As the oxidation proceeds, another Ols state with a stronger binding energy develops. The rapid initial oxidation is related to oxidation at or around the Si(111)-like Si adatoms, which are reportedly present in the 16×2 reconstruction of the Si(110) surface.

Journal

Citations (0)*help

See more

References(4)*help

See more

Related Articles

See more

Related Data

See more

Related Books

See more

Related Dissertations

See more

Related Projects

See more

Related Products

See more

Details

  • CRID
    1520572357988833536
  • NII Article ID
    110004757002
  • NII Book ID
    AA1123312X
  • ISSN
    09135685
  • NDL BIB ID
    7976230
  • Web Site
    http://id.ndl.go.jp/bib/7976230
  • Text Lang
    ja
  • NDL Source Classification
    • ZN33(科学技術--電気工学・電気機械工業--電子工学・電気通信)
  • Data Source
    • NDL
    • CiNii Articles

Report a problem

Back to top