著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Koji Eriguchi and Yoshinori Nakakubo and Asahiko Matsuda,Threshold voltage instability induced by plasma process damage in advanced metal-oxide-semiconductor field-effect transistors,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2010-08,49,8,,https://cir.nii.ac.jp/crid/1520572358344847360,