著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Tomoko Ito and Kazuhiro Karahashi and Kohei Mizotani,Si Damage Due to Oblique-Angle Ion Impact Relevant for Vertical Gate Etching Processes,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2012-08,51,8,,https://cir.nii.ac.jp/crid/1520572358373721472,