著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Takayuki Sugiyama and Hiroshi Amano and Daisuke Iida,High-temperature operation of normally off-mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2011-01,50,1,,https://cir.nii.ac.jp/crid/1520572358414671744,