Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
Sung Hwan Kim and Hyun Jun Bae and Chang Woo Oh,Advanced 10nm Width Silicon-on-Insulator Tri-Gate Transistors with NO Annealing of Gate Oxide Using Optimized Novel Silicon-on-Insulator Realization Technology,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2012-04,51,4,,https://cir.nii.ac.jp/crid/1520572358425852544,