著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Sang-Heon Han and Dong-Yul Lee and Jin-Young Lim,Effect of Internal Electric Field in Well Layer of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes on Efficiency Droop,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2012-10,51,10,100201,https://cir.nii.ac.jp/crid/1520572358494652928,https://doi.org/10.1143/jjap.51.100201