Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
Shinichi Takagi and Mitsuru Takenaka,Physical origin of drive current enhancement in ultrathin Ge-on-insulator n-channel metal-oxide-semiconductor field-effect transistors under full ballistic transport,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2011-01,50,1,,https://cir.nii.ac.jp/crid/1520572358518521600,