著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Il-Ho Ahn and Hodoug Joung,Band structure dependence of electron mobility in modulation-doped lattice-matched InAlAs/InGaAs/InAlAs heterostructures,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2010-08,49,8,084303,https://cir.nii.ac.jp/crid/1520572358587274496,https://doi.org/10.1143/jjap.49.084303