InAlAs Graded Metamorphic Buffer with Digital Alloy Intermediate Layers
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説明
<jats:p> In this work, the threading dislocation suppression effects of InAs/In<jats:sub>0.52</jats:sub>Al<jats:sub>0.48</jats:sub>As digital alloy intermediate layers in an InP-based InAlAs graded metamorphic buffer were investigated to improve the structural and optical qualities of the buffer. Cross-sectional transmission electron microscopy, atomic force microscopy, and photoluminescence measurements proved that the insertion of thin digital alloy layers in the graded buffer markedly improves the surface quality, decreases the threading dislocation density, and enhances the photoluminescence efficiency of In<jats:sub>0.8</jats:sub>Ga<jats:sub>0.2</jats:sub>As/In<jats:sub>0.8</jats:sub>Al<jats:sub>0.2</jats:sub>As quantum wells. This study shows great potentials by incorporating digital alloy intermediate layers in metamorphic buffers to improve the quality of metamorphic devices. </jats:p>
収録刊行物
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 51 (8), 080205-, 2012-08
Tokyo : The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1520572359136933120
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- NII論文ID
- 40019395152
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- NII書誌ID
- AA12295836
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- ISSN
- 00214922
- 13474065
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- NDL書誌ID
- 023907383
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- 本文言語コード
- en
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- NDL 雑誌分類
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- ZM35(科学技術--物理学)
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- データソース種別
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- NDL
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