Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
Koichiro Zaitsu and Masumi Saitoh and Yukio Nakabayashi,Low gate-induced drain leakage and its physical origins in Si nanowire transistors,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2011-04,50,4,,https://cir.nii.ac.jp/crid/1520572359194915840,