著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Keisuke Yamamoto and Takeshi Yamanaka and Kenji Harada,Schottky Source/Drain Ge Metal-Oxide-Semiconductor Field-Effect Transistors with Directly Contacted TiN/Ge and HfGe/Ge Structures,Applied physics express : APEX,18820778,Tokyo : Japan Society of Applied Physics,2012-05,5,5,,https://cir.nii.ac.jp/crid/1520573330513393152,