著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Tomoyuki Sengoku and Ryoichiro Suzuki and Kosuke Nemoto,Photoluminescence characteristics of InAs quantum dots with GaInP cover layer grown by metalorganic chemical vapor deposition,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2009-07,48,7,070203,https://cir.nii.ac.jp/crid/1520853832060878464,https://doi.org/10.1143/jjap.48.070203