Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
Shenghou Liu and Jinyan Wang and Rumin Gong,Enhanced device performance of AlGaN/GaN high electron mobility transistors with thermal oxidation treatment,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2011-04,50,4,,https://cir.nii.ac.jp/crid/1520853832234256000,