著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Sanghyun Woo and Hyungseok Hong and Seokhoon Kim,Characteristics of metal-oxide-semiconductor field-effect transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si stack structures formed by remote plasma technique,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2008-08,47,8,6196-6199,https://cir.nii.ac.jp/crid/1520853832432559360,