著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Bin Wang and He-Ming Zhang and Hui-Yong Hu,High-Frequency Capacitance-Voltage Characteristics of N-Type Metal-Oxide-Semiconductor Capacitor Based on Strained-Si/SiGe Architecture,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2013-06,52,6,,https://cir.nii.ac.jp/crid/1520853832866548864,