著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Osamu Yoshitake and Jun Kikkawa and Yoshiaki Nakamura,Annealing effects on Ge/SiO2 interface structure in wafer-bonded germanium-on-insulator substrates,Japanese journal of applied physics : JJAP,00214922,Tokyo : The Japan Society of Applied Physics,2011-04,50,4,,https://cir.nii.ac.jp/crid/1520853833026670592,